【英文标准名称】:StandardTestMethodforMeasuringMOSFETDrainLeakageCurrent
【原文标准名称】:测量MOSFET(金属氧化物半导体场效应晶体管)排漏电流的试验方法
【标准号】:ASTMF616-1992
【标准状态】:作废
【国别】:
【发布日期】:1992
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F01.11
【标准类型】:(TestMethod)
【标准水平】:()
【中文主题词】:电子工程;泄漏;试验;电流;测量;流出
【英文主题词】:Currentmeasurement-semiconductors;Design-electroniccomponents;Electricalconductors-semiconductors;Electricalmeasurements;Integratedcircuits;Leaktesting-electrondevices;MOSFETs;MOSFETdrainleakagecurrent,test
【摘要】:1.1ThistestmethodcoversthemeasurementofMOSFET(Note1)drainleakagecurrent.Note1-MOSisanacronymformetal-oxidesemiconductor;FETisanacronymforfield-effecttransistor.1.2Thetestmethodisapplicabletoallenhancement-modeanddepletion-modeMOSFETs.Thetestmethodspecifiespositivevoltageandcurrent,conventionsspecificallyapplicableton-channelMOSFETs.Thesubstitutionofnegativevoltageandnegativecurrentmakesthemethoddirectlyapplicabletop-channelMOSFETs.1.3Thisd-ctestmethodisapplicablefortherangeofdrainvoltagesgreaterthan0Vbutlessthanthedrainbreakdownvoltage.1.4Thisstandarddoesnotpurporttoaddressallofthesafetyproblems,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappropriatesafetyandhealthpracticesanddeterminetheapplicabilityofregulatorylimitationspriortouse.
【中国标准分类号】:L44
【国际标准分类号】:31_080_30
【页数】:3P.;A4
【正文语种】: